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參數(shù)資料
| 型號： | M58LT128GS |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| 中文描述： | 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存 |
| 文件頁數(shù)： | 15/98頁 |
| 文件大?。?/td> | 693K |
| 代理商： | M58LT128GS |
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M58LT128GST, M58LT128GSB
2 Signal descriptions
15/98
2.12 V
SS
Ground
V
SS
ground is the reference for the core supply. It must be connected to the system ground.
2.13 V
SSQ
Ground
V
SSQ
ground is the reference for the input/output circuitry driven by V
DDQ
. V
SSQ
must be
connected to V
SS
Note: Each device in a system should have V
DD
,
V
DDQ
and V
PP
decoupled with a 0.1μF
ceramic capacitor close to the pin (high frequency, inherently low inductance capacitors should
be as close as possible to the package). See
Figure 8: AC Measurement Load Circuit
. The
PCB track widths should be sufficient to carry the required V
PP
program and erase currents.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LT128GSB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
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