參數(shù)資料
型號： M58LT128GS
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
中文描述： 128Mbit（8兆x16插槽，多銀行，多層次，多突發(fā)）1.8V電源安全閃存
文件頁數(shù)： 14/98頁
文件大小： 693K
代理商： M58LT128GS
2 Signal descriptions
M58LT128GST, M58LT128GSB
14/98
2.7
Latch Enable (L)
Latch Enable latches the A0-A22 address bits on its rising edge. The address latch is
transparent when Latch Enable is at V
IL
and it is inhibited when Latch Enable is at V
IH
.
2.8
Clock (K)
The clock input synchronizes the memory to the microcontroller during synchronous read
operations; the address is latched on a Clock edge (rising or falling, according to the
configuration settings) when Latch Enable is at V
IL
. Clock is ignored during asynchronous read
and in write operations.
2.9
Wait (WAIT)
Wait is an output signal used during synchronous read to indicate whether the data on the
output bus are valid. This output is high impedance when Chip Enable is at V
IH
or Reset is at
V
IL
. It can be configured to be active during the wait cycle or one clock cycle in advance. The
WAIT signal is forced deasserted when Output Enable is at V
IH
.
2.10 V
DD
Supply Voltage
V
DD
provides the power supply to the internal core of the memory device. It is the main power
supply for all operations (Read, Program and Erase).
2.10.1 V
DDQ
Supply Voltage
V
DDQ
provides the power supply to the I/O pins and enables all Outputs to be powered
independently from V
DD
. V
DDQ
can be tied to V
DD
or can use a separate supply.
2.11 V
PP
Program Supply Voltage
The V
PP
pin is both a power supply and a write protect pin. The functions are selected by the
voltage range applied to the pin.
When V
PP
is lower than V
PPLK
, it is seen as a write protect pin protecting the whole memory
array. Program and erase operations on all blocks are ignored while V
PP
is Low.
When V
PP
is Higher than V
PP1
, the memory reverts to the previous protection state of the
memory array. Program and erase operations can now modify the data in any block (refer to
Table 21: DC Characteristics - Voltages
for V
PPLK
and V
PP1
values). V
PP
is only sampled at the
beginning of a program or erase; a change in its value after the operation has started does not
have any effect and program or erase operations continue.
If V
PP
is in the range of V
PPH
it acts as a power supply pin. In this condition V
PP
must be stable
until the Program/Erase algorithm is completed.
The V
PP
pin must not be left floating or unconnected or the device may become unreliable. A
0.1μF capacitor should be connected between the V
PP
pin and the V
SS
Ground pin to decouple
the current surges from the power supply. The PCB track widths must be sufficient to carry the
currents required during Unlock Bypass Program, I
PP
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LT128GSB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GST 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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