參數(shù)資料
型號： M58CR064QZB
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 32/70頁
文件大小： 1000K
代理商： M58CR064QZB
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
32/70
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 16, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
Table 17. Capacitance
Note: Sampled only, not 100% tested.
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Parameter
85
90
100
120
Unit
Min
Max
Min
Max
Min
Max
Min
Max
V
DD
Supply Voltage
1.8
2.0
1.7
2.0
1.65
2.0
1.65
2.0
V
V
DDQ
Supply Voltage
1.8
3.3
1.7
3.3
1.65
3.3
1.65
3.3
V
V
PP
Supply Voltage (Factory environment)
11.4
12.6
11.4
12.6
11.4
12.6
11.4
12.6
V
V
PP
Supply Voltage (Application
environment)
–0.4
V
DDQ
+0.4
–0.4
V
DDQ
+0.4
–0.4
V
DDQ
+0.4
–0.4
V
DDQ
+0.4
V
Ambient Operating Temperature
–40
85
–40
85
–40
85
–40
85
°C
Load Capacitance (C
L
)
30
30
30
30
pF
Input Rise and Fall Times
4
4
4
4
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
AI06161
VDDQ
0V
VDDQ/2
AI06162
VDDQ
CL
CL includes JIG capacitance
16.7k
DEVICE
UNDER
TEST
0.1μF
VDD
0.1μF
VDDQ
16.7k
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
相關(guān)PDF資料
PDF描述
M58CR064P90ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q10ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D10ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D90ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P10ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58CR064-ZBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58DR032C100ZA6T 功能描述:閃存 32M (4Mx8) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M-58H 制造商:MG Electronics 功能描述:8'' x 5'' Paging Horn
M5-8L 制造商:SPC Multicomp 功能描述:IC PAD
M58LR016C100ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
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