參數(shù)資料
型號(hào): M58CR064QZB
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的× 16,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 31/70頁
文件大?。?/td> 1000K
代理商: M58CR064QZB
31/70
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 15. Absolute Maximum Ratings
Value
Symbol
Parameter
Min
Max
Unit
T
A
Ambient Operating Temperature
–40
85
°C
T
BIAS
Temperature Under Bias
–40
125
°C
T
STG
Storage Temperature
–55
155
°C
V
IO
Input or Output Voltage
–0.5
V
DDQ
+0.5
V
V
DD
Supply Voltage
–0.5
2.7
V
V
DDQ
Input/Output Supply Voltage
–0.5
3.6
V
V
PP
Program Voltage
–0.5
13
V
I
O
Output Short Circuit Current
100
mA
t
VPPH
Time for V
PP
at V
PPH
100
hours
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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