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參數(shù)資料
| 型號： | M58CR064QZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 27/70頁 |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064QZB |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Synchronous Single Reads are used to read the
Electronic Signature, Status Register, CFI, Block
Protection Status, Configuration Register Status
or Protection Register. When the addressed bank
is in Read CFI, Read Status Register or Read
Electronic Signature mode, the WAIT signal is al-
ways deasserted.
See Table 21, Synchronous Read AC Character-
istics and Figure 13, Single Synchronous Read AC
Waveform for details.
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
The Dual Operations feature simplifies the soft-
ware management of the device and allows code
to be executed from one bank while the other bank
is being programmed or erased.
The Dual operations feature means that while pro-
gramming or erasing in one bank, Read opera-
tions are possible in the other bank with zero
latency (only one bank at a time is allowed to be in
Program or Erase mode). If a Read operation is re-
quired in a bank which is programming or erasing,
the Program or Erase operation can be suspend-
ed. Also if the suspended operation was Erase
then a Program command can be issued to anoth-
er block, so the device can have one block in
Erase Suspend mode, one programming and the
other bank in Read mode. Bus Read operations
are allowed in the other bank between setup and
confirm cycles of program or erase operations.
The combination of these features means that
read operations are possible at any moment.
Tables 11 and 12 show the dual operations possi-
ble in the other bank and in the same bank. For a
complete list of possible commands refer to Ap-
pendix D, Command Interface State Tables.
Table 11. Dual Operations Allowed In Other Bank
Table 12. Dual Operations Allowed In Same Bank
Note: 1. Not allowed in the Block or Word that is being erased or programmed.
Status of bank
Commands allowed in other bank
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Electronic
Signature
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
Yes
Yes
Yes
Yes
–
–
–
–
Erasing
Yes
Yes
Yes
Yes
–
–
–
–
Program Suspended
Yes
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
Yes
Yes
Yes
Yes
–
–
Yes
Status of bank
Commands allowed in same bank
Read
Array
Read
Status
Register
Read
CFI Query
Read
Electronic
Signature
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
–
Yes
–
–
–
–
Yes
–
Erasing
–
Yes
–
–
–
–
Yes
–
Program Suspended
Yes
(1)
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
(1)
Yes
Yes
Yes
Yes
(1)
–
–
Yes
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58DR032C100ZA6T | 功能描述:閃存 32M (4Mx8) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M-58H | 制造商:MG Electronics 功能描述:8'' x 5'' Paging Horn |
| M5-8L | 制造商:SPC Multicomp 功能描述:IC PAD |
| M58LR016C100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
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