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參數(shù)資料
| 型號： | M58CR064Q90ZB6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 68/70頁 |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064Q90ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
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REVISION HISTORY
Table 38. Document Revision History
Date
Version
Revision Details
November 2000
-01
First Issue
12/20/00
-02
Protection/Security clarification
Memory Map diagram clarification (Figure 4)
Single Synchronous Read clarification (Figure 6)
Identifier Codes clarification (Table 6)
X-Latency configuration clarification
CFI Query Identification String change (Table 31)
Synchronous Burst Read Waveforms change (Figure 12)
Reset AC Characteristics clarification (Table 24)
Program Time clarification (Table )
1/08/01
-03
Reset AC Characteristics clarification (Table 24)
Reset AC Waveforms diagram change (Figure 1)
3/02/01
-04
Document type: from Target Specification to Product Preview
Read Status Register clarification
Read Electronic Signature clarification
Protection Register Program clarification
Write Configuration Register clarification
Wait Configuration Sequence change (Figure 7)
CFI Query System Interface clarification (Table 32)
CFI Device Geometry change (Table 33)
Asynchronous Read AC Waveforms change (Figure 10)
Page Read AC Waveforms added (Figure 11)
Write AC Waveforms W Contr. and E Contr. change (Figure 14, 15)
Reset and Power-up AC Characteristics and Waveform change (Table 24, Figure 1)
TFBGA Package Mechanical Data and Outline added (Table 25, Figure 17)
4/05/01
-05
TFBGA Connections change
X-Latency Configuration Sequence change
Reset and Power-up AC Characteristics clarification
V
DDQ
clarification
23-Jul-2001
-06
Complete rewrite and restructure
23-Oct-2001
-07
85ns speed class added, document classified as Preliminary Data
15-Mar-2002
-08
Part numbers M58CR064P/Q added. CFI information clarified: Table 31,data
modified at Offset 13h. Table 32, data modified at Offsets 20h, 23h, 24h and 25h.
Table 35, Offset addresses modified. DC Characteristics table modified, Program,
Erase Times and Program, Erase Endurance Cycles table modified.
23-May-2002
-09
Document changed to new structure
27-Aug-2002
9.1
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot.
(revision version 09 equals 9.0).
Document status changed from Preliminary Data to Datasheet.
Minimum V
DD
and V
DDQ
supply voltages for 85ns speed class changed to 1.8V in
Table16, Operating and AC Measurement Conditions.
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| M58LT128GSB1ZA5E | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB1ZA5F | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GST1ZA5 | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
| M58LT128GSB | 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064QZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58DR032C100ZA6T | 功能描述:閃存 32M (4Mx8) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M-58H | 制造商:MG Electronics 功能描述:8'' x 5'' Paging Horn |
| M5-8L | 制造商:SPC Multicomp 功能描述:IC PAD |
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