參數(shù)資料
型號： M58CR064Q12ZB6T
廠商： 意法半導體
英文描述： 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 59/70頁
文件大小： 1000K
代理商： M58CR064Q12ZB6T
59/70
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Figure 21. Double Word Program Flowchart and Pseudo code
Note: 1. Status check of b1 (Protected Block), b3 (V
PP
Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
Write 30h
AI06171
Start
Write Address 1
& Data 1 (3)
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
Write Address 2
& Data 2 (3)
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (bank_address, 0x30) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.b7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR1==1) /*program to protect block error */
error_handler ( ) ;
}
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相關代理商/技術參數(shù)
參數(shù)描述
M58CR064Q85ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q90ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064QZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064-ZBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58DR032C100ZA6T 功能描述:閃存 32M (4Mx8) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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