參數(shù)資料
型號: M58CR064Q12ZB6T
廠商: 意法半導體
英文描述: 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的× 16,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 25/70頁
文件大?。?/td> 1000K
代理商: M58CR064Q12ZB6T
25/70
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Figure 6. X-Latency and Data Output Configuration Example
Figure 7. Wait Configuration Example
AI90005
A21-A0
VALID ADDRESS
K
L
DQ15-DQ0
VALID DATA
X-latency
VALID DATA
tACC
tAVK_CPU
tK
tQVK_CPU
tQVK_CPU
tKQV
1st cycle
2nd cycle
3rd cycle
4th cycle
Note. Settings shown: X-latency = 4, Data Output held for one clock cycle
E
tDELAY
AI90006b
A21-A0
VALID ADDRESS
K
L
DQ15-DQ0
VALID DATA
WAIT
CR8 = '0'
WAIT
CR8 = '1'
VALID DATA
NOT VALID
VALID DATA
E
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相關代理商/技術參數(shù)
參數(shù)描述
M58CR064Q85ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q90ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064QZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064-ZBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58DR032C100ZA6T 功能描述:閃存 32M (4Mx8) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel