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參數(shù)資料
| 型號(hào)： | M58CR064Q12ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 23/70頁(yè) |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064Q12ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Burst length Bits (CR2-CR0)
The Burst Length bits set the number of Words to
be output during a Synchronous Burst Read oper-
ation as result of a single address latch cycle.
They can be set for 4 words, 8 words or continu-
ous burst, where all the words are read sequential-
ly.
In continuous burst mode the burst sequence can
cross bank boundaries.
In continuous burst mode or in 4, 8 words no-wrap,
depending on the starting address, the device as-
serts the WAIT output to indicate that a delay is
necessary before the data is output.
If the starting address is aligned to a 4 word
boundary no wait states are needed and the WAIT
output is not asserted.
If the starting address is shifted by 1,2 or 3 posi-
tions from the four word boundary, WAIT will be
asserted for 1, 2 or 3 clock cycles when the burst
sequence crosses the first 64 word boundary, to
indicate that the device needs an internal delay to
read the successive words in the array. WAIT will
be asserted only once during a continuous burst
access. See also Table 10, Burst Type Definition.
CR14, CR9, CR5
and
CR4
are reserved for future
use.
Table 9. Configuration Register
Bit
Description
Value
Description
CR15
Read Select
0
Synchronous Read
1
Asynchronous Read (Default at power-on)
CR14
Reserved
CR13-CR11
X-Latency
010
2 clock latency
011
3 clock latency
100
4 clock latency
101
5 clock latency
111
Reserved
Other configurations reserved
CR10
Power-Down
0
Power-Down disabled
1
Power-Down enabled
CR9
Reserved
CR8
Wait Configuration
0
WAIT
is active during wait state
1
WAIT
is active one data cycle before wait state (default)
CR7
Burst Type
0
Interleaved
1
Sequential (default)
CR6
Valid Clock Edge
0
Falling Clock edge
1
Rising Clock edge
CR5-CR4
Reserved
CR3
Wrap Burst
0
Wrap
1
No Wrap
CR2-CR0
Burst Length
001
4 words
010
8 words
111
Continuous (CR7 m
ust be set to ‘1’)
相關(guān)PDF資料 |
PDF描述 |
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| M58CR064D85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064DZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064QZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064Q85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q90ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064QZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58DR032C100ZA6T | 功能描述:閃存 32M (4Mx8) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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