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參數(shù)資料
| 型號： | M58CR064P90ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 32/70頁 |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064P90ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
32/70
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 16, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
Table 17. Capacitance
Note: Sampled only, not 100% tested.
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Parameter
85
90
100
120
Unit
Min
Max
Min
Max
Min
Max
Min
Max
V
DD
Supply Voltage
1.8
2.0
1.7
2.0
1.65
2.0
1.65
2.0
V
V
DDQ
Supply Voltage
1.8
3.3
1.7
3.3
1.65
3.3
1.65
3.3
V
V
PP
Supply Voltage (Factory environment)
11.4
12.6
11.4
12.6
11.4
12.6
11.4
12.6
V
V
PP
Supply Voltage (Application
environment)
–0.4
V
DDQ
+0.4
–0.4
V
DDQ
+0.4
–0.4
V
DDQ
+0.4
–0.4
V
DDQ
+0.4
V
Ambient Operating Temperature
–40
85
–40
85
–40
85
–40
85
°C
Load Capacitance (C
L
)
30
30
30
30
pF
Input Rise and Fall Times
4
4
4
4
ns
Input Pulse Voltages
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
DDQ
/2
V
AI06161
VDDQ
0V
VDDQ/2
AI06162
VDDQ
CL
CL includes JIG capacitance
16.7k
DEVICE
UNDER
TEST
0.1μF
VDD
0.1μF
VDDQ
16.7k
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58CR064Q10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064PZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064PZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q12ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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