參數(shù)資料
型號(hào): M58CR064P10ZB6T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的× 16,雙行,突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù): 25/70頁(yè)
文件大?。?/td> 1000K
代理商: M58CR064P10ZB6T
25/70
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Figure 6. X-Latency and Data Output Configuration Example
Figure 7. Wait Configuration Example
AI90005
A21-A0
VALID ADDRESS
K
L
DQ15-DQ0
VALID DATA
X-latency
VALID DATA
tACC
tAVK_CPU
tK
tQVK_CPU
tQVK_CPU
tKQV
1st cycle
2nd cycle
3rd cycle
4th cycle
Note. Settings shown: X-latency = 4, Data Output held for one clock cycle
E
tDELAY
AI90006b
A21-A0
VALID ADDRESS
K
L
DQ15-DQ0
VALID DATA
WAIT
CR8 = '0'
WAIT
CR8 = '1'
VALID DATA
NOT VALID
VALID DATA
E
相關(guān)PDF資料
PDF描述
M58CR064PZB 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P85ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q85ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064-ZBT 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064C10ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58CR064P12ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P85ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064P90ZB6T 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58CR064PZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory