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參數(shù)資料
| 型號： | M58CR064DZB |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 67/70頁 |
| 文件大小： | 1000K |
| 代理商： | M58CR064DZB |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Table 37. Command Interface States - Modify Table
Current State of the Current
Bank
Note: PS = Program Suspend, ES = Erase Suspend.
Current State
of the Other
Bank
Command Input to the Current Bank (and Next State of the Current Bank)
Mode
State
Others
Program Setup
(10h/40h)
Block Erase
Setup (20h)
Program-Erase
Suspend (B0h)
Protection
Register
Program Setup
(C0h)
Double/
Quadruple
Program Setup
(30h/55h)
Bank Erase
Setup (80h)
Setup
Busy
Read
Array, CFI,
Electronic
Signature,
Status Register
SEE LOCK
TABLE
Read Array
Read Array
Read Array
Read Array
Read Array
Read Array
Idle
Program setup
Block Erase
Setup
Protection
Register Setup
Double/
Quadruple
Program Setup
Bank Erase
Setup
Erase Suspend
Program
Suspend
Setup
Busy
Read Array
Read Array
Read Array
Read Array
Read Array
Lock Unlock
Lock-Down CR
Error,
Lock Unlock
Lock-Down
Block,
Set CR
SEE LOCK
TABLE
Read Array
Read Array
Read Array
Read Array
Read Array
Read Array
Idle
Program setup
Block Erase
Setup
Protection
Register Setup
Double/
Quadruple
Program Setup
Bank Erase
Setup
Erase Suspend
Program
Suspend
Idle
Setup
Busy
Read Array
Read Array
Read Array
Read Array
Read Array
Protection
Register
Setup
Busy
Protection
Register (Busy)
Protection
Register (Busy)
Read Array
Protection
Register (Busy)
Read Array
Block Erase
Setup
Protection
Register (Busy)
Protection
Register (Busy)
Read Array
Protection
Register Setup
Protection
Register (Busy)
Read Array
Double/
Quadruple
Program Setup
Protection
Register (Busy)
Read Array
Bank Erase
Setup
Done
SEE LOCK
TABLE
Read Array
Idle
Program Setup
Erase Suspend
Program
Suspend
Any State
Read Array
Read Array
Read Array
Read Array
Read Array
Program
Double/
Quadruple
Word Program
Setup
Program (Busy) Program (Busy) Program (Busy)
Program (Busy)
PS Read Status
Register
Program (Busy) Program (Busy) Program (Busy)
Idle
Busy
Setup
Busy
Done
SEE LOCK
TABLE
Read Array
Read Array
Read Array
Read Array
Read Array
Read Array
Idle
Program Setup
Block Erase
Setup
Protection
Register Setup
Double/
Quadruple
Program Setup
Bank Erase
Setup
Erase Suspend
Program
Suspend
Setup
Idle
Read Array
Read Array
Read Array
Read Array
Read Array
Program
Suspend
Read Array,
CFI, Elect.
Sign., Status
Register
SEE LOCK
TABLE
PS Read Array
PS Read Array
PS Read Array
PS Read Array
PS Read Array
PS Read Array
Erase Suspend
Idle
Block/ Bank
Erase
Setup
SEE LOCK
TABLE
Erase Error
Erase Error
Erase Error
Erase Error
Erase Error
Erase Error
Busy
Erase (Busy)
Erase (Busy)
Erase (Busy)
ES Read Status
Register
Erase (Busy)
Erase (Busy)
Erase (Busy)
Setup
Busy
Erase Suspend
Read Array,
CFI, Elect.
Sign., Status
Register
SEE LOCK
TABLE
ES Read Array
ES Read Array
ES Read Array
ES Read Array
ES Read Array
ES Read Array
Idle
Program Setup
Double/
Quadruple
Program Setup
Program
Suspend
ES Read Array
ES Read Array
相關PDF資料 |
PDF描述 |
|---|---|
| M58CR064QZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P12ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P90ZB6T | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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