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參數(shù)資料
| 型號： | M58CR064D90ZB6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 60/70頁 |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064D90ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
60/70
Figure 22. Quadruple Word Program Flowchart and Pseudo Code
Note: 1. Status check of SR1 (Protected Block), SR3 (V
PP
Invalid) and SR4 (Program Error) can be made after each program operation or
after a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1.
Write 55h
AI06172
Start
Write Address 1
& Data 1 (3)
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR3 = 0
NO
SR4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
YES
End
YES
NO
SR1 = 0
Program to Protected
Block Error (1, 2)
Write Address 2
& Data 2 (3)
quadruple_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2,
addressToProgram3, dataToProgram3,
addressToProgram4, dataToProgram4)
{
writeToFlash (bank_address, 0x55) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
writeToFlash (addressToProgram3, dataToProgram3) ;
/*see note (3) */
writeToFlash (addressToProgram4, dataToProgram4) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.b7== 0) ;
if (status_register.SR3==1) /*VPP invalid error */
error_handler ( ) ;
if (status_register.SR4==1) /*program error */
error_handler ( ) ;
if (status_register.SR==1) /*program to protect block error */
error_handler ( ) ;
}
Write Address 3
& Data 3 (3)
Write Address 4
& Data 4 (3)
相關PDF資料 |
PDF描述 |
|---|---|
| M58CR064P10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064PZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064-ZBT | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064DZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P12ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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