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參數(shù)資料
| 型號： | M58CR064D85ZB6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 19/70頁 |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064D85ZB6T |
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19/70
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
I
The third bus cycle latches the Address and the
Data of the second word to be written.
I
The fourth bus cycle latches the Address and
the Data of the third word to be written.
I
The fifth bus cycle latches the Address and the
Data of the fourth word to be written and starts
the Program/Erase Controller.
Read operations to the bank being programmed
output the Status Register content after the pro-
gramming has started.
Programming aborts if Reset goes to V
IL
. As data
integrity cannot be guaranteed when the program
operation is aborted, the memory locations must
be reprogrammed.
During Quadruple Word Program operations the
bank being programmed will only accept the Read
Status Register command, all other commands
will be ignored.
Dual operations are not supported during Quadru-
ple Word Program operations. It is not recom-
mended to suspend the Quadruple Word Program
command. Typical Program times are given in Ta-
ble 14, Program, Erase Times and Program/Erase
Endurance Cycles.
See Appendix C, Figure 22, Quadruple Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Quadruple Word Program
command.
Table 7. Factory Program Commands
Note: 1. WA=Word Address in targeted bank, BKA= Bank Address, PD=Program Data, WA1 is the Start Address.
2. Word Addresses 1 and 2 must be consecutive Addresses differing only for A0.
3. Word Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
Command
Phase
C
Bus Write Operations
1st
2nd
3rd
4th
5th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Bank Erase
2
BKA
80h
BKA
D0h
Double Word Program
(2)
3
BKA
30h
WA1
PD1
WA2
PD2
Quadruple Word
Program
(3)
5
BKA
55h
WA1
PD1
WA2
PD2
WA3
PD3
WA4
PD4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58CR064DZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064QZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064D90ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064DZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P12ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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