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參數(shù)資料
| 型號： | M58CR064D10ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 44/70頁 |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064D10ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
44/70
Table 23. Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. t
WHEL
has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If the read operation is in a different
bank t
WHEL
is 0ns.
Symbol
Alt
Parameter
M58CR064
Unit
85
90
100
120
C
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
85
90
100
120
ns
t
AVEH
t
WC
Address Valid to Chip Enable High
Min
60
60
60
60
ns
t
AVLH
Address Valid to Latch Enable High
Min
10
10
10
10
ns
t
DVEH
t
DS
Input Valid to Write Enable High
Min
40
40
40
40
ns
t
EHAX
t
AH
Chip Enable High to Address Transition
Min
0
0
0
0
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
Min
0
0
0
0
ns
t
EHEL
t
WPH
Chip Enable High to Chip Enable Low
Min
30
30
30
30
ns
t
EHGL
Chip Enable High to Output Enable Low
Min
0
0
0
0
ns
t
EHWH
t
CH
Chip Enable High to Write Enable High
Min
0
0
0
0
ns
t
ELEH
t
WP
Chip Enable Low to Chip Enable High
Min
60
60
60
60
ns
t
ELLH
Chip Enable Low to Latch Enable High
Min
10
10
10
10
ns
t
ELQV
Latch Enable Low to Output Valid
Min
85
90
100
120
ns
t
GHEL
Output Enable High to Chip Enable Low
Min
20
20
20
20
ns
t
LHAX
Latch Enable High to Address Transition
Min
10
10
10
10
ns
t
LLLH
Latch Enable Pulse Width
Min
10
10
10
10
ns
t
WHEL(2)
Write Enable High to Chip Enable Low
Min
50
50
50
50
ns
t
WHKV
Write Enable High to Clock Valid
Min
25
25
25
25
ns
t
WLEL
t
CS
Write Enable Low to Chip Enable Low
Min
0
0
0
0
ns
P
t
EHVPL
Chip Enable High to V
PP
Low
Min
200
200
200
200
ns
t
EHWPL
Chip Enable High to Write Protect Low
Min
200
200
200
200
ns
t
QVVPL
Output (Status Register) Valid to V
PP
Low
Min
0
0
0
0
ns
t
QVWPL
Output (Status Register) Valid to Write Protect Low
Min
0
0
0
0
ns
t
VPHEH
t
VPS
V
PP
High to Chip Enable High
Min
200
200
200
200
ns
t
WPHEH
Write Protect High to Chip Enable High
Min
200
200
200
200
ns
相關(guān)PDF資料 |
PDF描述 |
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| M58CR064D90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064PZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064D12ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D90ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064DZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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