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參數(shù)資料
| 型號(hào)： | M58CR064CZB |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 45/70頁(yè) |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064CZB |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Figure 16. Reset and Power-up AC Waveforms
Table 24. Reset and Power-up AC Characteristics
Note: 1. The device Reset is possible but not guaranteed if t
PLPH
< 50ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during Power-Up or Reset.
Symbol
Parameter
Test Condition
85
90
100
120
Unit
t
PLWL
t
PLEL
t
PLGL
t
PLLL
Reset Low to
Write Enable Low,
Chip Enable Low,
Output Enable Low,
Latch Enable Low
During Program
Min
10
10
10
10
μs
During Erase
Min
20
20
20
20
μs
Other Conditions
Min
80
80
80
80
ns
t
PLPH (1,2)
RP Pulse Width
Min
50
50
50
50
ns
t
VDHPH (3)
Supply Voltages High to Reset
High
Min
50
50
50
50
μs
AI90013c
W,
RP
E, G,
VDD, VDDQ
tVDHPH
tPLPH
Power-Up
Reset
tPLWL
tPLEL
tPLGL
tPLLL
L
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相關(guān)代理商/技術(shù)參數(shù) |
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| M58CR064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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| M58CR064D12ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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