參數(shù)資料
型號(hào)： M58CR064C85ZB6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 42/70頁
文件大?。?/td> 1000K
代理商： M58CR064C85ZB6T
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
42/70
Table 22. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. t
WHEL
has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If the read operation is in a different
bank t
WHEL
is 0ns.
Symbol
Alt
Parameter
M58CR064
Unit
85
90
100
120
W
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
85
90
100
120
ns
t
AVLH
Address Valid to Latch Enable High
Min
10
10
10
10
ns
t
AVWH
t
WC
Address Valid to Write Enable High
Min
60
60
60
60
ns
t
DVWH
t
DS
Input Valid to Write Enable High
Min
40
40
40
40
ns
t
ELLH
Chip Enable Low to Latch Enable High
Min
10
10
10
10
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
0
0
ns
t
ELQV
Chip Enable Low to Output Valid
Min
85
90
100
120
ns
t
GHWL
Output Enable High to Write Enable Low
Min
20
20
20
20
ns
t
LHAX
Latch Enable High to Address Transition
Min
10
10
10
10
ns
t
LLLH
Latch Enable Pulse Width
Min
10
10
10
10
ns
t
WHAV
Write Enable High to Address Valid
Min
0
0
0
0
ns
t
WHAX
t
AH
Write Enable High to Address Transition
Min
0
0
0
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
Min
0
0
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
0
0
ns
t
WHEL(2)
Write Enable High to Chip Enable Low
Min
50
50
50
50
ns
t
WHGL
Write Enable High to Output Enable Low
Min
0
0
0
0
ns
t
WHLL
Write Enable High to Latch Enable Low
Min
0
0
0
0
ns
t
WHKV
Write Enable High to Clock Valid
Min
25
25
25
25
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
30
30
30
30
ns
t
WHQV
Write Enable High to Output Valid
Min
105
110
120
140
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
50
50
50
50
ns
P
t
QVVPL
Output (Status Register) Valid to V
PP
Low
Min
0
0
0
0
ns
t
QVWPL
Output (Status Register) Valid to Write Protect Low
Min
0
0
0
0
ns
t
VPHWH
t
VPS
V
PP
High to Write Enable High
Min
200
200
200
200
ns
t
WHVPL
Write Enable High to V
PP
Low
Min
200
200
200
200
ns
t
WHWPL
Write Enable High to Write Protect Low
Min
200
200
200
200
ns
t
WPHWH
Write Protect High to Write Enable High
Min
200
200
200
200
ns
相關(guān)PDF資料
PDF描述
M58CR064C90ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064CZB 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q90ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58LT128GSB1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58CR064C90ZB6T 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58CR064CZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D12ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
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