參數(shù)資料
型號： M58CR064C85ZB6T
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體
文件頁數(shù)： 1/70頁
文件大小： 1000K
代理商： M58CR064C85ZB6T
1/70
June 2003
M58CR064C, M58CR064D
M58CR064P, M58CR064Q
64 Mbit (4Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DD
= 1.65V to 2V for Program, Erase and
Read
– V
DDQ
= 1.65V to 3.3V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
I
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode : 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 85, 90, 100, 120ns
I
PROGRAMMING TIME
– 10μs by Word typical
– Double/Quadruple Word Program option
I
MEMORY BLOCKS
– Dual Bank Memory Array: 16/48 Mbit
– Parameter Blocks (Top or Bottom location)
I
DUAL OPERATIONS
– Program Erase in one Bank while Read in
other
– No delay between Read and Write operations
I
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
I
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
I
COMMON FLASH INTERFACE (CFI)
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58CR064C: 88CAh
– Bottom Device Code, M58CR064D: 88CBh
– Top Device Code, M58CR064P: 8801h
– Bottom Device Code, M58CR064Q: 8802h
FBGA
TFBGA56 (ZB)
6.5 x 10mm
相關(guān)PDF資料
PDF描述
M58CR064C90ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064CZB 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064Q90ZB6T 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58LT128GSB1ZA5E 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
M58LT128GSB1ZA5F 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58CR064C90ZB6T 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58CR064CZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D10ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
M58CR064D12ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
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