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參數(shù)資料
| 型號(hào)： | M58CR064C12ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 33/70頁(yè) |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064C12ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
Table 18. DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DD
Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=6MHz)
E = V
IL
, G = V
IH
3
6
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
6
13
mA
8 Word
8
14
mA
Continuous
6
10
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
7
16
mA
8 Word
10
18
mA
Continuous
13
25
mA
I
DD2
Supply Current
(Power-Down)
RP = V
SS
± 0.2V
2
10
μA
I
DD3
Supply Current (Standby)
E = V
DD
± 0.2V
10
50
μA
I
DD4
(1)
Supply Current (Program)
V
PP
= V
PPH
8
15
mA
V
PP
= V
DD
10
20
mA
Supply Current (Erase)
V
PP
= V
PPH
8
15
mA
V
PP
= V
DD
10
20
mA
I
DD5 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
13
26
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
16
30
mA
I
DD6(1)
Supply Current Program/ Erase
Suspended (Standby)
E = V
DD
± 0.2V
10
50
μA
I
PP1(1)
V
PP
Supply Current (Program)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
V
PP
Supply Current (Erase)
V
PP
= V
PPH
2
5
mA
V
PP
= V
DD
0.2
5
μA
I
PP2
V
PP
Supply Current (Read)
V
PP
= V
PPH
100
400
μA
V
PP
≤
V
DD
0.2
5
μA
I
PP3(1)
V
PP
Supply Current (Standby)
V
PP
≤
V
DD
0.2
5
μA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58CR064D12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064DZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064C85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064C90ZB6T | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58CR064CZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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