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參數(shù)資料
| 型號： | M58CR064C12ZB6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 30/70頁 |
| 文件大?。?/td> | 1000K |
| 代理商： | M58CR064C12ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
30/70
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the M58CR064 the maximum number of
Program/ Erase cycles depends on the voltage
supply used.
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. T
A
= –40 to 85°C; V
DD
= 1.65V to 2V; V
DDQ
= 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (30ms).
3. Excludes the time needed to execute the command sequence.
Parameter
Condition
Min
Typ
Typical
after
100k W/E
Cycles
Max
Unit
V
P
D
Parameter Block (4 KWord) Erase
(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank A (16Mbit) Erase
Preprogrammed
11
s
Not Preprogrammed
18
s
Bank B (48Mbit) Erase
Preprogrammed
33
s
Not Preprogrammed
54
s
Parameter Block (4 KWord) Program
(3)
40
ms
Main Block (32 KWord) Program
(3)
300
ms
Word Program
(3)
10
10
100
μs
Program Suspend Latency
5
10
μs
Erase Suspend Latency
5
20
μs
Program/Erase Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
P
P
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank A (16Mbit) Erase
13
s
Bank B (48Mbit) Erase
39
s
4Mbit Program
Quadruple Word
510
ms
Word/ Double Word/ Quadruple Word Program
(3)
8
100
μs
Parameter Block (4 KWord)
Program
(3)
Quadruple Word
8
ms
Word
32
ms
Main Block (32 KWord) Program
(3)
Quadruple Word
64
ms
Word
256
ms
Program/Erase Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58CR064D12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064DZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58CR064C85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064C90ZB6T | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58CR064CZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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