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參數資料
| 型號： | M58CR064C12ZB6T |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁數： | 16/70頁 |
| 文件大小： | 1000K |
| 代理商： | M58CR064C12ZB6T |
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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
16/70
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 13 shows the Lock Status af-
ter issuing a Block Lock-Down command. Refer to
the section, Block Locking, for a detailed explana-
tion and Appendix C, Figure 26, Locking Opera-
tions Flowchart and Pseudo Code, for a flowchart
for using the Lock-Down command.
Table 5. Standard Commands
Note: 1. X = Don’t Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,
QD=Query Data, BA=Block Address, BKA= Bank Address, BBKA= Bottom Bank Address, PD=Program Data, PRA=Protection
Register Address, PRD=Protection Register Data, CRD=Configuration Register Data.
2. Must be same bank as in the first cycle. The signature addresses are listed in Table 6.
3. When addressed to a block in the Top Bank, reads Block Protection data only.
Commands
C
Bus Operations
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA
(2)
SRD
Read Electronic Signature
1+
Write
BBKA or
BKA
(3)
90h
Read
BBKA or
BKA
(2,3)
ESD
(3)
Read CFI Query
1+
Write
BBKA
98h
Read
BBKA
(2)
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
2
Write
BKA
20h
Write
BA
D0h
Program
2
Write
BKA
40h or 10h
Write
WA
PD
Program/Erase Suspend
1
Write
BKA
B0h
Program/Erase Resume
1
Write
BKA
D0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
2
Write
BKA
60h
Write
BA
01h
Block Unlock
2
Write
BKA
60h
Write
BA
D0h
Block Lock-Down
2
Write
BKA
60h
Write
BA
2Fh
相關PDF資料 |
PDF描述 |
|---|---|
| M58CR064D12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064DZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M58CR064C85ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064C90ZB6T | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58CR064CZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
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