- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359080 > M58CR064-ZBT (意法半導(dǎo)體) 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M58CR064-ZBT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 16/70頁(yè) |
| 文件大小： | 1000K |
| 代理商： | M58CR064-ZBT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)
M58CR064C, M58CR064D, M58CR064P, M58CR064Q
16/70
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 13 shows the Lock Status af-
ter issuing a Block Lock-Down command. Refer to
the section, Block Locking, for a detailed explana-
tion and Appendix C, Figure 26, Locking Opera-
tions Flowchart and Pseudo Code, for a flowchart
for using the Lock-Down command.
Table 5. Standard Commands
Note: 1. X = Don’t Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,
QD=Query Data, BA=Block Address, BKA= Bank Address, BBKA= Bottom Bank Address, PD=Program Data, PRA=Protection
Register Address, PRD=Protection Register Data, CRD=Configuration Register Data.
2. Must be same bank as in the first cycle. The signature addresses are listed in Table 6.
3. When addressed to a block in the Top Bank, reads Block Protection data only.
Commands
C
Bus Operations
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA
(2)
SRD
Read Electronic Signature
1+
Write
BBKA or
BKA
(3)
90h
Read
BBKA or
BKA
(2,3)
ESD
(3)
Read CFI Query
1+
Write
BBKA
98h
Read
BBKA
(2)
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
2
Write
BKA
20h
Write
BA
D0h
Program
2
Write
BKA
40h or 10h
Write
WA
PD
Program/Erase Suspend
1
Write
BKA
B0h
Program/Erase Resume
1
Write
BKA
D0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
2
Write
BKA
60h
Write
BA
01h
Block Unlock
2
Write
BKA
60h
Write
BA
D0h
Block Lock-Down
2
Write
BKA
60h
Write
BA
2Fh
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58CR064C10ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064C85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064C90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064CZB | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q90ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58DR032C100ZA6T | 功能描述:閃存 32M (4Mx8) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M-58H | 制造商:MG Electronics 功能描述:8'' x 5'' Paging Horn |
| M5-8L | 制造商:SPC Multicomp 功能描述:IC PAD |
| M58LR016C100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58LR016C120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。