參數(shù)資料
型號(hào): M58BW032DT60ZA3T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
中文描述: 32兆位(1兆X32號(hào),引導(dǎo)塊,突發(fā))3.3V電源快閃記憶體
文件頁(yè)數(shù): 60/60頁(yè)
文件大?。?/td> 906K
代理商: M58BW032DT60ZA3T
M58BW032BT, M58BW032BB, M58BW032DT, M58BW032DB
60/60
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58BW032DT60ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
M58BW16F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories
M58BW16FB4D150 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays
M58BW16FB4T3 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories
M58BW16FB4T3F 功能描述:IC FLASH 16MBIT 45NS 80PQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤(pán) 其它名稱:71P71804S200BQ