- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359080 > M58BW032DT60ZA3T (意法半導(dǎo)體) 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M58BW032DT60ZA3T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory |
| 中文描述： | 32兆位（1兆X32號(hào)，引導(dǎo)塊，突發(fā)）3.3V電源快閃記憶體 |
| 文件頁數(shù)： | 23/60頁 |
| 文件大?。?/td> | 906K |
| 代理商： | M58BW032DT60ZA3T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁
23/60
M58BW032BT, M58BW032BB, M58BW032DT, M58BW032DB
Typical Erase times are given in Table
10
.
See Appendix
A
,
Figure 22., Block Erase Flow-
chart and Pseudo Code
, for a suggested flowchart
on using the Block Erase command.
Erase All Main Blocks Command
The Erase All Main Blocks command is used to
erase all 63 Main Blocks, without affecting the Pa-
rameter Blocks.
Issuing the Erase All Main Blocks command sets
every bit in each Main Block to '1'. All data previ-
ously stored in the Main Blocks are lost.
Two Bus Write cycles are required to issue the
Erase All Main Blocks command. The first cycle
sets up the command, the second cycle confirms
the command and starts the Program/Erase Con-
troller. If the Confirm Command is not given the
sequence is aborted, and Status Register bits 4
and 5 are set to '1'.
If the address given in the second cycle is located
in a protected block, the Erase All Main Blocks op-
eration aborts. The data remains unchanged in all
blocks and the Status Register outputs the error.
Once the Erase All Main Blocks command has
been issued, subsequent Bus Read operations
output the Status Register. See the
STATUS
REGISTER
section for details.
During an Erase All Main Blocks operation, only
the Read Status Register command is accepted
by the memory; any other command are ignored.
Erase All Main Blocks, once started, cannot be
suspended.
The Erase All Main Blocks command can be exe-
cuted using V
DD
. If V
PEN
is at V
IH
, the operation
will be performed. If V
PEN
is lower than V
IH
the op-
eration aborts and the Status Register V
PEN
bit (bit
3) is set to '1'.
Program Command
The Program command is used to program the
memory array. Two Bus Write operations are re-
quired to issue the command; the first write cycle
sets up the Program command, the second write
cycle latches the address and data to be pro-
grammed and starts the Program/Erase Control-
ler. A program operation can be aborted by writing
FFFFFFFFh to any address after the program set-
up command has been given.
The Program command is also used to program
the OTP block. Refer to
Table 8., Commands
, for
details of the address.
Once the command is issued subsequent Bus
Read operations read the Status Register. See the
section on the Status Register for details on the
definitions of the Status Register bits. During the
Program operation the memory will only accept
the Read Status Register command and the Pro-
gram/Erase Suspend command. All other com-
mands will be ignored.
If Reset/Power-down, RP, falls to V
IL
during pro-
gramming the operation will be aborted.
The command can be executed using V
DD
. If V
PEN
is at V
IH
, the operation can be performed. If V
PEN
goes below V
IH,
the operation aborts, the V
PEN
Status bit in the Status Register is set to ‘1’ and the
command must be re-issued.
See Appendix
A
,
Figure 20., Program Flowchart
and Pseudo Code
, for a suggested flowchart on
using the Program command.
Write to Buffer and Program Command
The Write to Buffer and Program Command
makes use of the device’s double Word (32 bit)
Write Buffer to speed up programming.
Up to eight Double Words can be loaded into the
Write Buffer and programmed into the memory.
Four successive steps are required to issue the-
command.
1.
One Bus Write operation is required to set up
the Write to Buffer and Program Command.
Any Bus Read operations will start to output
the Status Register after the 1st cycle.
2.
Use one Bus Write operation to write the
selected memory Block Address (any address
in the block where the values will be
programmed can be used) along with the
value N on the Data Inputs/Outputs, where
N+1 is the number of Words to be
programmed. The maximum value of N+1 is 8
Words.
3.
Use N+1 Bus Write operations to load the
address and data for each Word into the Write
Buffer. The address must be between Start
Address and Start Address plus N, where
Start Address is the first word address.
4.
Finally, use one Bus Write operation to issue
the final cycle to confirm the command and
start the Program operation.
If any address is outside the block boundaries or if
the correct sequence is not followed, Status Reg-
ister bits 4 and 5 are set to ‘1’ and the operation will
abort without affecting the data in the memory ar-
ray. A protected block must be unprotected using
the Blocks Unprotect command.
During a Write to Buffer and Program operation
the memory will only accept the Read Status Reg-
ister and the Program/Erase Suspend commands.
All other commands are ignored. The Write to
Buffer and Program command can be executed
using V
DD
. If V
PEN
is at V
IH
, the operation will be
performed. If V
PEN
is lower than V
IH
the operation
aborts and the Status Register V
PEN
bit (bit 3) is
set to '1'.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58CR064C12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D85ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW032DT60ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory |
| M58BW16F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories |
| M58BW16FB4D150 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
| M58BW16FB4T3 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories |
| M58BW16FB4T3F | 功能描述:IC FLASH 16MBIT 45NS 80PQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。