參數(shù)資料
型號: M58BW016DB100ZA3T
廠商: 意法半導體
英文描述: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述: 16兆位512KB的X32號,引導塊,突發(fā)3V電源閃存
文件頁數(shù): 51/63頁
文件大?。?/td> 895K
代理商: M58BW016DB100ZA3T
51/63
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
Figure 23. Block Erase Flowchart and Pseudo Code
Note: 1. If an error is found, the Status Register must be cleared before further P/E operations.
Write 20h
AI03851
Start
Write Block Address
& D0h
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
YES
b4 and b5
= 1
VPP Invalid
Error (1)
Command
Sequence Error
Erase Command:
– write 20h
– write Block Address
(A11-A18) & D0h
(memory enters read status
state after the Erase command)
do:
– read status register
(E or G must be toggled)
if Erase command given execute
suspend erase loop
while b7 = 1
If b3 = 1, VPP invalid error:
– error handler
If b4, b5 = 1, Command Sequence error:
– error handler
NO
NO
b5 = 0
Erase
Error (1)
YES
NO
Suspend
Suspend
Loop
If b5 = 1, Erase error:
– error handler
YES
End
YES
NO
b1 = 0
Erase to Protected
Block Error
If b1 = 1, Erase to Protected Block Error:
– error handler
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