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參數(shù)資料
| 型號(hào)： | M58BW016DB100ZA3T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| 中文描述： | 16兆位512KB的X32號(hào)，引導(dǎo)塊，突發(fā)3V電源閃存 |
| 文件頁(yè)數(shù)： | 47/63頁(yè) |
| 文件大?。?/td> | 895K |
| 代理商： | M58BW016DB100ZA3T |
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M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
Table 27. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
Table 28. Device Geometry Definition
Address
A0-A18
Data
Description
1Bh
27h
(1)
V
DD
min, 2.7V
1Ch
36h
(1)
V
DD
max, 3.6V
1Dh
B4h
(2)
V
PP
min
1Eh
C6h
(2)
V
PP
max
1Fh
00h
(3)
2
n
ms typical time-out for Word, DWord prog – Not Available
20h
00h
(3)
2
n
ms, typical time-out for max buffer write – Not Available
21h
0Ah
2
n
ms, typical time-out for Erase Block
22h
00h
(3)
2
n
ms, typical time-out for chip erase – Not Available
23h
00h
(3)
2
n
x typical for Word Dword time-out max – Not Available
24h
00h
2
n
x typical for buffer write time-out max – Not Available
25h
04h
2
n
x typical for individual block erase time-out maximum
26h
00h
(3)
2
n
x typical for chip erase max time-out – Not Available
Address
A0-A18
Data
Description
27h
15h
2
n
number of bytes memory size
28h
03h
Device Interface Sync./Async.
29h
00h
Organization Sync./Async.
2Ah
00h
Page size in bytes, 2
n
2Bh
00h
2Ch
02h
Bit7-0 = number of Erase Block Regions in device
2Dh
1Eh
Number (n-1) of blocks of identical size; n=31
2Eh
00h
2Fh
00h
Erase Block region information x 256 bytes per
Erase Block (64Kbytes)
30h
01h
31h
07h
Number (n-1) of blocks of identical size; n=8
32h
00h
33h
20h
Erase Block region information x 256 bytes per
Erase Block (8Kbytes)
34h
00h
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW016DB100ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB70T3FF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70T3FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
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