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參數(shù)資料
| 型號(hào)： | M58BW016DB100ZA3T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| 中文描述： | 16兆位512KB的X32號(hào)，引導(dǎo)塊，突發(fā)3V電源閃存 |
| 文件頁(yè)數(shù)： | 40/63頁(yè) |
| 文件大?。?/td> | 895K |
| 代理商： | M58BW016DB100ZA3T |
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M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
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Table 20. Synchronous Burst Read AC Characteristics
Note: 1. Data output should be read on the valid clock edge.
2. For other timings see Table 16, Asynchronous Bus Read Characteristics.
Figure 15. Synchronous Burst Read (Data Valid from ’n’ Clock Rising Edge)
Note: For set up signals and timings see Synchronous Burst Read.
Symbol
Parameter
Test Condition
M58BW016
Unit
80
90
100
t
AVLL
Address Valid to Latch Enable Low
E = V
IL
Min
0
0
0
ns
t
BHKH
Burst Address Advance High to Valid Clock
Edge
E = V
IL
, G = V
IL
,
L = V
IH
Min
8
8
8
ns
t
BLKH
Burst Address Advance Low to Valid Clock
Edge
E = V
IL
, G = V
IL
,
L = V
IH
Min
8
8
8
ns
t
ELLL
Chip Enable Low to Latch Enable low
Min
0
0
0
ns
t
GLQV
Output Enable Low to Output Valid
E = V
IL
, L = V
IH
Min
25
25
25
ns
t
KHAX
Valid Clock Edge to Address Transition
E = V
IL
Min
5
5
5
ns
t
KHLL
Valid Clock Edge to Latch Enable Low
E = V
IL
Min
0
0
0
ns
t
KHLX
Valid Clock Edge to Latch Enable Transition
E = V
IL
Min
0
0
0
ns
t
KHQX
Valid Clock Edge to Output Transition
E = V
IL
, G = V
IL
,
L = V
IH
Min
3
3
3
ns
t
LLKH
Latch Enable Low to Valid Clock Edge
E = V
IL
Min
6
6
6
ns
t
QVKH(1)
Output Valid to Valid Clock Edge
E = V
IL
, G = V
IL
,
L = V
IH
Min
6
6
6
ns
t
RLKH
Valid Data Ready Low to Valid Clock Edge
E = V
IL
, G = V
IL
,
L = V
IH
Min
6
6
6
ns
t
KHQV
Valid Clock Edge to Output Valid
E = V
IL
, G = V
IL
,
L = V
IH
Max
11
11
11
ns
AI04408b
K
n+5
n+4
n+3
n+2
n+1
n
DQ0-DQ31
tQVKH
tKHQX
Q0
Q1
Q2
Q3
Q4
Q5
SETUP
Burst Read
Q0 to Q3
tKHQV
Note:
n depends on Burst X-Latency
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW016DB100ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB70T3FF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70T3FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
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