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參數(shù)資料
| 型號(hào)： | M58BW016DB100ZA3T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| 中文描述： | 16兆位512KB的X32號(hào)，引導(dǎo)塊，突發(fā)3V電源閃存 |
| 文件頁(yè)數(shù)： | 32/63頁(yè) |
| 文件大?。?/td> | 895K |
| 代理商： | M58BW016DB100ZA3T |
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M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
32/63
Table 15. DC Characteristics
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±5
μA
I
DD
Supply Current (Random Read)
E = V
IL
, G = V
IH
, f
add
= 6MHz
20
mA
I
DDB
Supply Current (Burst Read)
E = V
IL
, G = V
IH
, f
clock
=
56MHz
30
mA
I
DD1
Supply Current (Standby)
E = RP = V
DD
± 0.2V
60
μA
Supply Current (Auto Low-Power)
E = V
SS
± 0.2V,
RP = V
DD
± 0.2V
60
μA
I
DD2
Supply Current (Reset/Power-down)
RP = V
SS
± 0.2V
60
μA
I
DD3
Supply Current (Program or Erase,
Set Lock Bit, Erase Lock Bit)
Program, Block Erase in
progress
30
mA
I
DD4
Supply Current
(Erase/Program Suspend)
E = V
IH
40
μA
I
PP
Program Current (Read or Standby)
V
PP
≥
V
PP1
± 30
μA
I
PP1
Program Current (Read or Standby)
V
PP
≤
V
PP1
± 30
μA
I
PP2
Program Current (Power-down)
RP = V
IL
± 5
μA
I
PP3
Program Current (Program)
Program in Progress
V
PP
= V
PP1
200
μA
V
PP
= V
PPH
20
mA
I
PP4
Program Current (Erase)
Erase in Progress
V
PP
= V
PP1
200
μA
V
PP
= V
PPH
20
mA
V
IL
Input Low Voltage
–0.5
0.2V
DDQIN
V
V
IH
Input High Voltage (for DQ lines)
0.8V
DDQIN
V
DDQ
+0.3
V
V
IH
Input High Voltage (for Input only
lines)
0.8V
DDQIN
3.6
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage CMOS
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
Program Voltage
(Program or Erase operations)
2.7
3.6
V
V
PPH
Program Voltage
(Program or Erase operations)
11.4
12.6
V
V
LKO
V
DD
Supply Voltage (Erase and
Program lockout)
2.2
V
V
PPLK
V
PP
Supply Voltage (Erase and
Program lockout)
11.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW016DB100ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB70T3FF | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70T3FT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FF | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
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