參數(shù)資料
型號(hào): M58BW016DB100T6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述: 16兆位512KB的X32號(hào),引導(dǎo)塊,突發(fā)3V電源閃存
文件頁(yè)數(shù): 34/63頁(yè)
文件大小: 895K
代理商: M58BW016DB100T6T
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
34/63
Figure 10. Asynchronous Latch Controlled Bus Read AC Waveforms
Table 17. Asynchronous Latch Controlled Bus Read AC Characteristics
Symbol
Parameter
Test Condition
M58BW016
Unit
80
90
100
t
AVLL
Address Valid to Latch Enable Low
E = V
IL
Min
0
0
0
ns
t
EHLX
Chip Enable High to Latch Enable Transition
Min
0
0
0
ns
t
EHQX
Chip Enable High to Output Transition
G = V
IL
Min
0
0
0
ns
t
EHQZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
20
20
20
ns
t
ELLL
Chip Enable Low to Latch Enable Low
Min
0
0
0
ns
t
GHQX
Output Enable High to Output Transition
E = V
IL
Min
0
0
0
ns
t
GHQZ
Output Enable High to Output Hi-Z
E = V
IL
Max
15
15
15
ns
t
GLQV
Output Enable Low to Output Valid
E = V
IL
Max
25
25
25
ns
t
GLQX
Output Enable Low to Output Transition
E = V
IL
Min
0
0
0
ns
t
LHAX
Latch Enable High to Address Transition
E = V
IL
Min
5
5
5
ns
t
LHLL
Latch Enable High to Latch Enable Low
Min
10
10
10
ns
t
LLLH
Latch Enable Low to Latch Enable High
E = V
IL
Min
10
10
10
ns
t
LLQV
Latch Enable Low to Output Valid
E = V
IL
, G = V
IL
Max
80
90
100
ns
t
LLQX
Latch Enable Low to Output Transition
E = V
IL
, G = V
IL
Min
0
0
0
ns
AI03645
L
E
G
A0-A18
DQ0-DQ31
VALID
tEHLX
tLHLL
tLHAX
tAVLL
tELLL
tLLLH
tEHQX
tEHQZ
tGHQX
GHQZ
tLLQX
tLLQV
tGLQX
tGLQV
See also Page Read
OUTPUT
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