參數(shù)資料
型號(hào): M58BW016BTT
廠商: 意法半導(dǎo)體
英文描述: ER 26C 26#16 PIN PLUG
中文描述: 16兆位512KB的X32號(hào),引導(dǎo)塊,突發(fā)3V電源閃存
文件頁(yè)數(shù): 41/63頁(yè)
文件大?。?/td> 895K
代理商: M58BW016BTT
41/63
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
Figure 16. Synchronous Burst Read - Continuous - Valid Data Ready Output
Note: Valid Data Ready = Valid Low during valid clock edge
1. V= Valid output.
2. R is an open drain output with an internal pull up resistor of 1M
.
The internal timing of R follows DQ. An external resistor, typically
300k
.
for a single memory on the R bus, should be used to give the data valid set up time required to recognize that valid data is
available on the next valid clock edge.
Figure 17. Synchronous Burst Read - Burst Address Advance
AI03649
K
Output
(1)
V
V
V
V
tRLKH
R
V
(2)
AI03650
K
ADD
Q0
Q1
L
Q2
ADD
VALID
G
tGLQV
tBLKH
tBHKH
B
相關(guān)PDF資料
PDF描述
M58BW016BTZA 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DBZA 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB100ZA6T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB90T3T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB90T6T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58BW016BTZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB100T3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB100T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB100ZA3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories