參數(shù)資料
型號(hào)： M58BW016BB80ZA6T
廠商： 意法半導(dǎo)體
英文描述： ER 8C 8#12 SKT PLUG
中文描述： 16兆位512KB的X32號(hào)，引導(dǎo)塊，突發(fā)3V電源閃存
文件頁數(shù)： 24/63頁
文件大?。?/td> 895K
代理商： M58BW016BB80ZA6T
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
24/63
the command is issued then a fast erase operation
will be executed, otherwise the operation will use
V
DD
. If V
PP
goes below the V
PP
Lockout Voltage,
V
PPLK
, during a fast erase the operation aborts,
the Status Register V
PP
Status bit is set to ‘1’ and
the command must be re-issued.
Typical Erase times are given in Table 10.
See Appendix B, Figure 23, Block Erase Flowchart
and Pseudo Code, for a suggested flowchart on
using the Block Erase command.
Program Command.
The Program command is used to program the
memory array. Two Bus Write operations are re-
quired to issue the command; the first write cycle
sets up the Program command, the second write
cycle latches the address and data to be pro-
grammed in the internal state machine and starts
the Program/Erase Controller. A program opera-
tion can be aborted by writing FFFFFFFFh to any
address after the program set-up command has
been given.
Once the command is issued subsequent Bus
Read operations read the Status Register. See the
section on the Status Register for details on the
definitions of the Status Register bits. During the
Program operation the memory will only accept
the Read Status Register command and the Pro-
gram/Erase Suspend command. All other com-
mands will be ignored.
If Reset/Power-down, RP, falls to V
IL
during pro-
gramming the operation will be aborted.
The command can be executed using either V
DD
(for a normal program operation) or V
PP
(for a fast
program operation). If V
PP
is in the V
PPH
range
when the command is issued then a fast program
operation will be executed, otherwise the opera-
tion will use V
DD
. If V
PP
goes below the V
PP
Lock-
out Voltage, V
PPLK
, during a fast program the
operation aborts and the Status Register V
PP
Sta-
tus bit is set to ‘1’. As data integrity cannot be guar-
anteed when the program operation is aborted, the
memory block must be erased and repro-
grammed.
See Appendix B, Figure 21, Program Flowchart
and Pseudo Code, for a suggested flowchart on
using the Program command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Erase operation. The com-
mand will only be accepted during a Program or
Erase operation. It can be issued at any time dur-
ing a program or erase operation. The command
is ignored if the device is already in suspend
mode.
One Bus Write cycle is required to issue the Pro-
gram/Erase Suspend command and pause the
Program/Erase Controller. Once the command is
issued it is necessary to poll the Program/Erase
Controller Status bit (bit 7) to find out when the
Program/Erase Controller has paused; no other
commands will be accepted until the Program/
Erase Controller has paused. After the Program/
Erase Controller has paused, the memory will con-
tinue to output the Status Register until another
command is issued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the op-
eration to complete. Once the Program/Erase
Controller Status bit (bit 7) indicates that the Pro-
gram/Erase Controller is no longer active, the Pro-
gram Suspend Status bit (bit 2) or the Erase
Suspend Status bit (bit 6) can be used to deter-
mine if the operation has completed or is suspend-
ed. For timing on the delay between issuing the
Program/Erase Suspend command and the Pro-
gram/Erase Controller pausing see Table 10.
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature, Read Query and Program/Erase Re-
sume commands will be accepted by the Com-
mand Interface. Additionally, if the suspended
operation was Erase then the Program and the
Program Suspend commands will also be accept-
ed. When a program operation is completed inside
a Block Erase Suspend the Read Memory Array
command must be issued to reset the device in
Read mode, then the Erase Resume command
can be issued to complete the whole sequence.
Only the blocks not being erased may be read or
programmed correctly.
See Appendix B, Figure 22, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
24, Erase Suspend & Resume Flowchart and
Pseudo Code, for suggested flowcharts on using
the Program/Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the Pro-
gram/Erase Resume command.
See Appendix B, Figure 22, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
24, Erase Suspend & Resume Flowchart and
Pseudo Code, for suggested flowcharts on using
the Program/Erase Resume command.
Set Burst Configuration Register Command.
The Set Burst Configuration Register command is
used to write a new value to the Burst Configura-
tion Control Register which defines the burst
length, type, X and Y latencies, Synchronous/
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PDF描述
M58BW016BB80ZA3T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB80T6T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58BW016BB90T3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB90T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB90ZA3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB90ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BBT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
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