參數(shù)資料
型號(hào): M58BW016BB80T6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述: 16兆位512KB的X32號(hào),引導(dǎo)塊,突發(fā)3V電源閃存
文件頁(yè)數(shù): 27/63頁(yè)
文件大小: 895K
代理商: M58BW016BB80T6T
27/63
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
Table 10. Program, Erase Times and Program Erase Endurance Cycles
Note: T
A
= –40 to 125°C, V
DD
= 2.7V to 3.6V, V
DDQ
= 2.4V to V
DD
Parameters
M58BW016B/D
Unit
Min
Typ
Max
V
PP
= V
DD
V
PP
= 12V
V
PP
= V
DD
V
PP
= 12V
Parameter Block (64Kb) Program
0.030
0.016
0.060
0.032
s
Main Block (512Kb) Program
0.23
0.13
0.46
0.26
s
Parameter Block Erase
0.8
0.64
1.8
1.5
s
Main Block Erase
1.5
0.9
3
1.8
s
Program Suspend Latency Time
3
10
μs
Erase Suspend Latency Time
10
30
μs
Program/Erase Cycles (per Block)
100,000
cycles
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