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參數(shù)資料
| 型號(hào)： | M58BW016BB80T3T |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| 中文描述： | 16兆位512KB的X32號(hào)，引導(dǎo)塊，突發(fā)3V電源閃存 |
| 文件頁(yè)數(shù)： | 31/63頁(yè) |
| 文件大?。?/td> | 895K |
| 代理商： | M58BW016BB80T3T |
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M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 13,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 13. Operating and AC Measurement Conditions
Figure 7. AC Measurement Input Output
Waveform
Note: V
DD
= V
DDQ
.
Figure 8. AC Measurement Load Circuit
Table 14. Device Capacitance
Note: 1. T
A
= 25°C, f = 1 MHz
2. Sampled only, not 100% tested.
Parameter
Value
Units
Min
Max
Supply Voltage (V
DD
)
2.7
3.6
V
Input/Output Supply Voltage (V
DDQ
)
2.4
V
DD
V
Ambient Temperature (T
A
)
Grade 6
–40
90
°C
Grade 3
–40
125
°C
Load Capacitance (C
L
)
60
pF
Clock Rise and Fall Times
4
ns
Input Rise and Fall Times
4
ns
Input Pulses Voltages
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDQ
/2
V
AI04153
VDDQ
VDDQIN
0V
VDDQ/2
VDDQIN/2
AI04154
1.3V
OUT
CL
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Symbol
Parameter
Test Condition
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
相關(guān)PDF資料 |
PDF描述 |
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| M58BW016BB100ZA6T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB100ZA3T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB100T6T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB100T3T | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW016BB80T6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB80ZA3T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB80ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB90T3T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB90T6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
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