參數(shù)資料
型號(hào): M58BW016BB100T6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述: 16兆位512KB的X32號(hào),引導(dǎo)塊,突發(fā)3V電源閃存
文件頁數(shù): 30/63頁
文件大?。?/td> 895K
代理商: M58BW016BB100T6T
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
30/63
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
ble 12, Absolute Maximum Ratings, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
STMicroelectronics SURE Program and other rel-
evant quality documents.
also
to
the
Table 12. Absolute Maximum Ratings
Note: Cumulative time at a high voltage level of 13.5V should not exceed 80 hours on V
PP
pin.
Symbol
Parameter
Value
Unit
Min
Max
T
BIAS
Temperature Under Bias
–40
125
°C
T
STG
Storage Temperature
–55
155
°C
V
IO
Input or Output Voltage
–0.6
V
DDQ
+0.6
V
DDQIN
+0.6
V
V
DD
, V
DDQ,
V
DDQIN
Supply Voltage
–0.6
4.2
V
V
PP
Program Voltage
–0.6
13.5
(1)
V
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參數(shù)描述
M58BW016BB100ZA3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB80T3 功能描述:閃存 16M (512Kx32) 80ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58BW016BB80T3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB80T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories