參數(shù)資料
型號(hào)： M58BW016BB100T6T
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述： 16兆位512KB的X32號(hào)，引導(dǎo)塊，突發(fā)3V電源閃存
文件頁(yè)數(shù)： 26/63頁(yè)
文件大小： 895K
代理商： M58BW016BB100T6T
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
26/63
Register bit 4 is set to '1' if there has been a pro-
gram failure.
Programming aborts if V
PP
drops out of the al-
lowed range or RP goes to V
IL
.
A Read Memory Array command must be issued
to return the memory to read mode before issuing
any other commands. Once the code has been
changed a device reset or power-down will make
the protection active with the new code.
See Appendix B, Figure 25, 26 and 27 for suggest-
ed flowcharts for using the Tuning Protection Pro-
gram command.
Table 9. Commands
Note: 1. X Don’t Care; RA Read Address, RD Read Data, ID Device Code, SRD Status Register Data, PA Program Address; PD Program
Data, QA Query Address, QD Query Data, BA Any address in the Block, BCR Burst Configuration Register value, TPA = Tuning
Protection Address, TPC = Tuning Protection Code.
2. Cycles 1 and 2 input the first 32 bits of the code, cycles 3 and 4 the second 32 bits of the code.
Command
C
Bus Operations
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
Op.
Addr.
Data
Op.
Addr.
Data Op.
Addr. Data
Op.
Addr.
Data
Read Memory Array
≥
2 Write
X
FFh
Read
RA
RD
Read Electronic Signature
(Manufacturer Code)
≥
2 Write
X
90h
Read 00000h
20h
Read Electronic Signature
(Device Code)
≥
2 Write
X
90h
Read 00001h
IDh
Read Electronic Signature
(Burst Configuration
Register)
≥
2 Write
X
90h
Read 00005h BCRh
Read Status Register
2
Write
X
70h
Read
X
SRDh
Read Query
≥
2 Write
X
98h
Read
QAh
QDh
Clear Status Register
1
Write
X
50h
Block Erase
2
Write
X
20h
Write
BAh
D0h
Program
2
Write
X
40h
10h
Write
PA
PD
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Set Burst Configuration
Register
2
Write
X
60h
Write
BCRh
03h
Tuning Protection
(2)
Program
4
Write
X
48h
Write
TPAh
TPCh Write
X
48h Write TPAh TPCh
Tuning Protection Unlock
(2)
4
Write
X
78h
Write
TPAh
TPCh Write
X
78h Write TPAh TPCh
相關(guān)PDF資料
PDF描述
M58BW016BB100T3T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB100ZA3T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DB100T6T 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW032DT60ZA3T 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58BW016BB100ZA3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB80T3 功能描述:閃存 16M (512Kx32) 80ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58BW016BB80T3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB80T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
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