參數(shù)資料
型號： M58BW016BB100T3T
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
中文描述： 16兆位512KB的X32號，引導(dǎo)塊，突發(fā)3V電源閃存
文件頁數(shù)： 33/63頁
文件大小： 895K
代理商： M58BW016BB100T3T
33/63
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
Figure 9. Asynchronous Bus Read AC Waveforms
Table 16. Asynchronous Bus Read AC Characteristics.
Note: 1. Output Enable G may be delayed up to t
ELQV
- t
GLQV
after the falling edge of Chip Enable E without increasing t
ELQV
.
Symbol
Parameter
Test Condition
M58BW016
Unit
80
90
100
t
AVAV
Address Valid to Address Valid
E = V
IL
, G = V
IL
Min
80
90
100
ns
t
AVQV
Address Valid to Output Valid
E = V
IL
, G = V
IL
Max
80
90
100
ns
t
AXQX
Address Transition to Output Transition
E = V
IL
, G = V
IL
Min
0
0
0
ns
t
EHLX
Chip Enable High to Latch Enable Transition
Min
0
0
0
ns
t
EHQX
Chip Enable High to Output Transition
G = V
IL
Min
0
0
0
ns
t
EHQZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
20
20
20
ns
t
ELQV(1)
Chip Enable Low to Output Valid
G = V
IL
Max
80
90
100
ns
t
ELQX
Chip Enable Low to Output Transition
G = V
IL
Min
0
0
0
ns
t
GHQX
Output Enable High to Output Transition
E = V
IL
Min
0
0
0
ns
t
GHQZ
Output Enable High to Output Hi-Z
E = V
IL
Max
15
15
15
ns
t
GLQV
Output Enable Low to Output Valid
E = V
IL
Max
25
25
25
ns
t
GLQX
Output Enable to Output Transition
E = V
IL
Min
0
0
0
ns
t
LLEL
Latch Enable Low to Chip Enable Low
Min
0
0
0
ns
AI0440 C
E
G
L
A0-A18
DQ0-DQ31
VALID
tLLEL
tAXQX
tELQX
tELQV
tAVQV
tGLQX
tGLQV
tEHQX
tEHQZ
tGHQX
tGHQZ
See also Page Read
OUTPUT
tEHLX
tAVAV
GD
AI04407C
E
G
L
DQ0-DQ31
tGHQX
See also Page Read
OUTPUT
GD
相關(guān)PDF資料
PDF描述
M58BW016BB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58BW016BB100T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB100ZA3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB100ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB80T3 功能描述:閃存 16M (512Kx32) 80ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58BW016BB80T3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
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