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參數(shù)資料
| 型號(hào)： | M58BF008ZA |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TV 8C 8#20 PIN RECP |
| 中文描述： | 8兆位的256Kb X32號(hào)，突發(fā)快閃記憶體 |
| 文件頁(yè)數(shù)： | 9/36頁(yè) |
| 文件大?。?/td> | 231K |
| 代理商： | M58BF008ZA |
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M58BF008
Table 6. Commands
Code
Command
02h
Overlay Block Erase Set-up
04h
Overlay Block Program Set-up
06h
Overlay Block Read Enable/
Disable
0Dh
Overlay Block Erase Confirm
20h
Erase Set-up
30h
Wrap/No-wrap Burst Toggle
40h
Program Set-up
50h
Clear Status Register
60h
Asynchronous/Synchronous
Read Toggle
70h
Read Status Register
90h
Read Electronic Signature
B0h
Program/Erase Suspend
D0h
Program/Erase Resume or
Erase Confirm
FFh
Read Memory Array
INSTRUCTIONS AND COMMANDS
The Instructions are listed in Tables 6 and 7. They
may be broadly divided into two types, those that
access or modify the memory content and those
that toggle a mode or function.
The Instructions that access ormodify the memory
content include:
– Read Memory Array (RD)
– Read Status Register (RSR) and Clear Status
Register (CLRS)
– Read Electronic Signature (RSIG)
– Erase (EE) and Overlay Block Erase (OBEE)
– Program (PG) and Overlay Block Program (OB-
PG)
– Program or Erase Suspend(PES) and Program
or Erase Resume (PER)
The Instructions that toggle a mode or function in-
clude:
– Asynchronous/Synchronous Read mode Tog-
gle (ART)
– Wrap/No-wrap Burst mode Toggle (WBT)
– Overlay Block Enable/Disable function Toggle
(OBT)
Instructions are written, in one or more write cy-
cles, to the memory Command Interface (C.I.) for
decoding. The Command Interface is reset to
Read Memory Array at power-up, when exiting
from power-down. Any invalid sequence of com-
mands will also reset the Command Interface to
Read Memory Array.
A Program/Erase Controller (P/E.C.) handles all
the timing and verifies the correct execution of the
Program or Erase instructions. The P/E.C. has a
Status Register which monitorsthe operations and
which may be read at any time during program or
erase. The Status Register bits indicate the oper-
ation and exit status of the internal algorithms.
The V
PP
Program and Erase Supply Voltage must
be withinthe range V
PP1
orV
PPH
for programming
or erasure. If V
PP
out of range, the program or
erase algorithms do not start and Status Register
bit V
PP
Status V
PPS
will be set to ’1’.
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| M58BW016BB100T6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB100ZA3T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB100ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
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