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參數(shù)資料
| 型號(hào)： | M58BF008ZA |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TV 8C 8#20 PIN RECP |
| 中文描述： | 8兆位的256Kb X32號(hào)，突發(fā)快閃記憶體 |
| 文件頁(yè)數(shù)： | 27/36頁(yè) |
| 文件大小： | 231K |
| 代理商： | M58BF008ZA |
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M58BF008
Figure 13. Program Suspend & Resume Flowchart and Pseudo Code
Note: 1. PES instruction is not allowed during OBPG operation.
Write
70h
Command
AI02664
Read Status
Register
YES
NO
b7 = 1
YES
NO
b4 = 1
Program Continues
Write FFh
Command
PES instruction (note
1):
– write B0h
command
(memory enters read register
state after the PES instruction)
do:
– read status
register
(E or G must be toggled)
while b7 = 1
If b4 = 0, Program
completed
(at this point the memory will
accept only the RD or PER instruction)
RD
instruction:
– write FFh
command
– one or more data
reads
from another block
Write
D0h
Command
PER
instruction:
– write D0h
command
to resume
erasure
– if the program operationcompleted
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase suspend
was not issued).
Read data
from
another block
Start
Write
B0h
Command
Program Complete
Write FFh
Command
Read Data
YES
NO
b6 = 1
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| M58BW016BB100T6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB100ZA3T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016BB100ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
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