參數(shù)資料
型號: M58BF008B100D6T
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 256Kb x32, Burst Flash Memory
中文描述: 8兆位的256Kb X32號,突發(fā)快閃記憶體
文件頁數(shù): 29/36頁
文件大?。?/td> 231K
代理商: M58BF008B100D6T
29/36
M58BF008
Figure 15. Erase Suspend & Resume Flowchart and Pseudo Code
Note: 1. PES instruction is not allowed during OBEE operation.
Write
70h
Command
AI02681
Read Status
Register
NO
b7 = 1
YES
NO
b5 = 1
Program Continues
Write FFh
Command
PES instruction(note
1):
– writeB0h
command
(memory enters read register
state after the PES instruction)
do:
– read status
register
(E or G must be toggled)
while b7 = 1
If b6 = 0, Erase
completed
(at this point the memory
wich
accept only the RD or PER instruction)
RD
instruction:
– writeFFh
command
– one o more data
reads
from another block
Write
D0h
Command
Read data
from
another
block
or Program
Start
Write
B0h
Command
Erase Complete
Write FFh
Command
Read Data
PG
instruction:
– write40h
command
– writeAddress & Data
PER
instruction:
– writeD0h
command
to resume
erasure
– if the program operation completed
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase suspend
was not issued).
YES
YES
NO
b6 = 1
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