參數(shù)資料
型號: M58BF008B100D6T
廠商: 意法半導體
英文描述: 8 Mbit 256Kb x32, Burst Flash Memory
中文描述: 8兆位的256Kb X32號,突發(fā)快閃記憶體
文件頁數(shù): 25/36頁
文件大小: 231K
代理商: M58BF008B100D6T
25/36
M58BF008
Figure 11. Reset/Power-down AC Waveforms
AI00624
tPHQV
tPHBL1
RP
tPLPH
RP
tPLPH
Reset during Read Mode
Reset during Program with t
PLPH
t
PLRH
tPLRH
tPHWL
tPHEL
tPHBL1
Abort
Complete
RP
tPLPH
Reset during Program/Erase with t
PLPH
> t
PLRH
tPLRH
tPHWL
tPHEL
tPHBL2
Abort
Complete
Power
Down
Table 20. Reset/Power-down AC Characteristics
(
T
A
= –40 to 125
°
C; V
DD
= 5V
±
10% and V
DDQ
= 3.3V
±
0.3V)
Mode
Symbol
Note: 1. The device Reset is possible but not guaranteed if t
PLPH
< 100ns.
A Reset will complete within 100ns if RP is Low while not in Program or Erase.
Parameter
Min
Max
Unit
Async
t
PHEL
Reset/Power-down High to Chip Enable Low
70
ns
t
PHQV
Reset/Power-down High to Output Valid
100
ns
t
PHWL
Reset/Power-down High to Write Enable Low
70
ns
t
PLPH(1)
Reset/Power-down Pulse Width
100
ns
t
PLRH
Reset/Power-down Low to Program Erase Abort
22
μ
s
Sync
t
PHBL1
Reset/Power-down High to Load Burst Address Low
20
ns
t
PHBL2
Reset/Power-down High to Load Burst Address Low
22
μ
s
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