參數(shù)資料
型號(hào): M58BF008
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit 256Kb x32, Burst Flash Memory
中文描述: 8兆位的256Kb X32號(hào),突發(fā)快閃記憶體
文件頁(yè)數(shù): 33/36頁(yè)
文件大小: 231K
代理商: M58BF008
33/36
M58BF008
Table 22. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Configuration, Package, etc...) or for further information on any aspect of
this device, please contact the STMicroelectronics Sales Office nearest to you.
Example:
M58BF008B
100 ZA
6
T
Device Type
M58
Architecture
B = Burst Mode
Operating Voltage
F = V
DD
= 5V
±
10%; V
DDQ
= 3.0V or 3.6V
Device Function
008 = 8 Mbit (256Kb x 32), Burst
Configuration
B = Synchronous Write, Burst Wrap,
Critical Word Latency = 4
Burst Word Latency = 1
Speed
100 = 100ns
Package
D = PQFP80
ZA = LBGA80: 1.0 mm pitch
Temperature Range
3 = –40 to 125
°
C
Option
T = Tape & Reel Packing
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