- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359067 > M48Z08-100PC6TR (意法半導(dǎo)體) VARISTOR BLOCK 130V RMS 40MM PDF資料下載
參數(shù)資料
| 型號(hào)： | M48Z08-100PC6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | VARISTOR BLOCK 130V RMS 40MM |
| 中文描述： | 64千位的8kB × 8 ZEROPOWER的SRAM |
| 文件頁數(shù)： | 4/18頁 |
| 文件大?。?/td> | 141K |
| 代理商： | M48Z08-100PC6TR |
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI (1)
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO (1)
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
5
μ
A
I
CC
Supply Current
Outputs open
80
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
3
mA
I
CC2
Supply Current (Standby) CMOS
E = V
CC
– 0.2V
3
mA
V
IL
(2)
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.2
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1mA
2.4
V
Notes:
1. Outputs deselects.
2. Negative spikes of –1V allowed for up to 10ns once per cycle.
Table 6. DC Characteristics
(T
A
= 0 to 70
°
C; V
CC
= 4.75V to 5.5V or 4.5V to 5.5V)
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
10
pF
C
IO (3)
Input / Output Capacitance
V
OUT
= 0V
10
pF
Notes:
1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected
Table 5. Capacitance
(1, 2)
(T
A
= 25
°
C)
Symbol
Parameter
Min
Typ
Max
Unit
V
PFD
Power-fail Deselect Voltage (M48Z08)
4.5
4.6
4.75
V
V
PFD
Power-fail Deselect Voltage (M48Z18)
4.2
4.3
4.5
V
V
SO
Battery Back-up Switchover Voltage
3.0
V
t
DR
Expected Data Retention Time
11
YEARS
Note:
1. All voltages referenced to V
SS
.
Table 7. Power Down/Up Trip Points DC Characteristics
(1)
(T
A
= 0 to 70
°
C)
For the 28 lead SOIC, the battery package (i.e.
SNAPHAT) part number is "M4Z28-BR00SH1".
The M48Z08/18 also has its own Power-fail Detect
circuit. The control circuitry constantly monitors the
single 5V supply for an out of tolerance condition.
When V
CC
is out of tolerance, the circuit write
protects the SRAM, providing a high degree of data
security in the midst of unpredictable system op-
eration brought on by low V
CC
. As V
CC
falls below
approximately 3V, the control circuitry connects the
battery which maintains data until valid power re-
turns.
DESCRIPTION
(cont’d)
4/18
M48Z08, M48Z18
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M48Z08-100PC6 | 64 Kbit 8Kb x 8 ZEROPOWER SRAM |
| M48Z08-100PC1TR | 64 Kbit 8Kb x 8 ZEROPOWER SRAM |
| M48Z08-100PC1 | 64 Kbit 8Kb x 8 ZEROPOWER SRAM |
| M48Z08-100MH6TR | 64 Kbit 8Kb x 8 ZEROPOWER SRAM |
| M48Z08-100MH6 | 64 Kbit 8Kb x 8 ZEROPOWER SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M48Z08-150PC1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| M48Z08-150PC6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| M48Z08-200PC1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| M48Z08-200PC6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit 2Kb x 8 ZEROPOWER SRAM |
| M48Z08-70PC1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Kbit 2Kb x 8 ZEROPOWER SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。