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M48T201Y, M48T201V
Data Retention Mode
With valid V
CC
applied, the M48T201Y/V can be
accessed as described above with READ or
WRITE cycles. Should the supply voltage decay,
the M48T201Y/V will automatically deselect, write
protecting itself (and any external SRAM) when
V
CC
falls between V
PFD
(max) and V
PFD
(min).
This is accomplished by internally inhibiting ac-
cess to the clock registers via the E signal. At this
time, the Reset pin (RST) is driven active and will
remain active until V
CC
returns to nominal levels.
External RAM access is inhibited in a similar man-
ner by forcing E
CON
to a high level. This level is
within 0.2V of the V
BAT
. E
CON
will remain at this
level as long as V
CC
remains at an out-of-toler-
ance condition. When V
CC
falls below the level of
the battery (V
BAT
), power input is switched from
the V
CC
pin to the SNAPHAT
battery and the
clock registers are maintained from the attached
battery supply. External RAM is also powered by
the SNAPHAT battery. All outputs except G
CON
,
E
CON
, RST, IRQ/FT and V
OUT
, become high im-
pedance. The V
OUT
pin is capable of supplying
100μA of current to the attached memory with less
than 0.3V drop under this condition. On power up,
when V
CC
returns to a nominal value, write protec-
tion continues for 200ms (max) by inhibiting E
CON
.
The RST signal also remains active during this
time (see
Figure 15., page 27
).
Note:
Most low power SRAMs on the market to-
day can be used with the M48T201Y/V TIME-
KEEPER
SUPERVISOR. There are, however
some criteria which should be used in making the
final choice of an SRAM to use.
The SRAM must be designed in a way where the
chip enable input disables all other inputs to the
SRAM. This allows inputs to the M48T201Y/V and
SRAMs to be “Don't care” once V
CC
falls below
V
PFD
(min). The SRAM should also guarantee
data retention down to V
CC
= 2.0V. The chip en-
able access time must be sufficient to meet the
system needs with the chip enable (and output en-
able) output propagation delays included.