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參數資料
| 型號： | M48T59Y-70MH1 |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| 中文描述： | 64千位8KB的x8 SRAM的計時器 |
| 文件頁數： | 4/17頁 |
| 文件大?。?/td> | 135K |
| 代理商： | M48T59Y-70MH1 |
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI (1)
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO (1)
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
5
μ
A
I
CC
Supply Current
Outputs open
50
mA
I
CC1
Supply Current (Standby) TTL
E1 = V
IH
, E2 = V
IL
3
mA
I
CC2
Supply Current (Standby) CMOS
E1 = V
CC
– 0.2V,
E2 = V
SS
+ 0.2V
3
mA
V
IL (2)
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2.2
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
Output Low Voltage (FT)
(3)
I
OL
= 10mA
0.4
V
V
OH
Output High Voltage
I
OH
= –1mA
2.4
V
Notes:
1. Outputs Deselected.
2. Negative spikes of –1V allowed for up to 10ns once per Cycle.
3. The FT pin is Open Drain.
Table 6. DC Characteristics
(T
A
= 0 to 70
°
C; V
CC
= 4.75V to 5.5V or 4.5V to 5.5V)
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
C
IO (3)
Input Capacitance
V
IN
= 0V
10
pF
Input / Output Capacitance
V
OUT
= 0V
10
pF
Notes:
1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected
Table 5. Capacitance
(1, 2)
(T
A
= 25
°
C, f = 1 MHz )
Symbol
Parameter
Min
Typ
Max
Unit
V
PFD
Power-fail Deselect Voltage (M48T58)
4.5
4.6
4.75
V
V
PFD
Power-fail Deselect Voltage (M48T58Y)
4.2
4.35
4.5
V
V
SO
Battery Back-up Switchover Voltage
3.0
V
t
DR(2)
Expected Data Retention Time
7
YEARS
Notes:
1. All voltages referenced to V
SS
.
2. At 25°C
Table 7. Power Down/Up Trip Points DC Characteristics
(1)
(T
A
= 0 to 70
°
C)
For the 28 lead SOIC, the battery/crystal package
(i.e. SNAPHAT) part number is "M4T28-
BR12SH1".
As Figure 3 shows, the static memory array and the
quartz controlled clock oscillator of the
M48T58/58Y are integrated on one silicon chip.
The two circuits are interconnected at the upper
eight memory locations to provide user accessible
BYTEWIDE
clock information in the bytes with
addresses 1FF8h-1FFFh. The clock locations con-
tain the year, month, date, day, hour, minute, and
second in 24 hour BCD format. Corrections for 28,
29 (leap year), 30, and 31 day months are made
automatically. Byte 1FF8h is the clock control reg-
ister. This byte controls user access to the clock
information and also stores the clock calibration
setting.
DESCRIPTION
(cont’d)
4/17
M48T58, M48T58Y
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M48T59Y-70MH1E | 功能描述:實時時鐘 64K (8Kx8) 70ns RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| M48T59Y-70MH1F | 功能描述:實時時鐘 64K (8Kx8) 70ns RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| M48T59Y-70MH1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| M48T59Y-70MH6 | 功能描述:實時時鐘 R 511-M48T59Y-70MH6E RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| M48T59Y-70MH6E | 功能描述:實時時鐘 64K (8Kx8) 70ns RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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