參數(shù)資料
型號(hào)： M29W640DB70N1F
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
中文描述： 64兆位和8Mb x8或4Mb的x16插槽，啟動(dòng)塊3V電源快閃記憶體
文件頁(yè)數(shù)： 43/49頁(yè)
文件大?。?/td> 945K
代理商： M29W640DB70N1F
43/49
M29W640DT, M29W640DB
APPENDIX D. BLOCK PROTECTION
Block protection can be used to prevent any oper-
ation from modifying the data stored in the memo-
ry. The blocks are protected in groups, refer to
APPENDIX A.
,
Table 19.
and
Table 20.
for details
of the Protection Groups. Once protected, Pro-
gram and Erase operations within the protected
group fail to change the data.
There are three techniques that can be used to
control Block Protection, these are the Program-
mer technique, the In-System technique and Tem-
porary Unprotection. Temporary Unprotection is
controlled by the Reset/Block Temporary Unpro-
tection pin, RP; this is described in the Signal De-
scriptions section.
Programmer Technique
The Programmer technique uses high (V
ID
) volt-
age levels on some of the bus pins. These cannot
be achieved using a standard microprocessor bus,
therefore the technique is recommended only for
use in Programming Equipment.
To protect a group of blocks follow the flowchart in
Figure 16., Programmer Equipment Group Protect
Flowchart
. To unprotect the whole chip it is neces-
sary to protect all of the groups first, then all
groups can be unprotected at the same time. To
unprotect the chip follow
Figure 17., Programmer
Equipment Chip Unprotect Flowchart
.
Table
28., Programmer Technique Bus Operations,
BYTE = V
IH
or V
IL
, gives a summary of each oper-
ation.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not abort the procedure before reaching the end.
Chip Unprotect can take several seconds and a
user message should be provided to show that the
operation is progressing.
In-System Technique
The In-System technique requires a high voltage
level on the Reset/Blocks Temporary Unprotect
pin, RP
(1)
. This can be achieved without violating
the maximum ratings of the components on the mi-
croprocessor bus, therefore this technique is suit-
able for use after the memory has been fitted to
the system.
To protect a group of blocks follow the flowchart in
Figure 18., In-System Equipment Group Protect
Flowchart
. To unprotect the whole chip it is neces-
sary to protect all of the groups first, then all the
groups can be unprotected at the same time. To
unprotect the chip follow
Figure 19., In-System
Equipment Chip Unprotect Flowchart
.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not allow the microprocessor to service interrupts
that will upset the timing and do not abort the pro-
cedure before reaching the end. Chip Unprotect
can take several seconds and a user message
should be provided to show that the operation is
progressing.
Note: 1. RP can be either at V
IH
or at V
ID
when using the In-Sys-
tem Technique to protect the Extended Block.
Table 28. Programmer Technique Bus Operations, BYTE = V
IH
or V
IL
Note: 1. Block Protection Groups are shown in
APPENDIX A.
, Tables
19
and
20
.
Operation
E
G
W
Address Inputs
A0-A21
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
Block (Group)
Protect
(1)
V
IL
V
ID
V
IL
Pulse
A9 = V
ID
, A12-A21 Block Address
Others = X
X
Chip Unprotect
V
ID
V
ID
V
IL
Pulse
A9 = V
ID
, A12 = V
IH
, A15 = V
IH
Others = X
X
Block (Group)
Protection Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A6 = V
IL
, A9 = V
ID
,
A12-A21 Block Address
Others = X
Pass = XX01h
Retry = XX00h
Block (Group)
Unprotection Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A6 = V
IH
, A9 = V
ID
,
A12-A21 Block Address
Others = X
Retry = XX01h
Pass = XX00h
相關(guān)PDF資料
PDF描述
M29W640DB70N1T 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70N6E 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70N6F CANKPSE01F14-19PF0
M29W640DB70N6T 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70ZA1E 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W640DB90N6 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W640DB90N6E 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W640DB90N6F 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W640DB90ZA6 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W640DB90ZA6T 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 63TFBGA - Tape and Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*