參數(shù)資料
型號： M29W008ET90N6E
廠商： 意法半導體
英文描述： 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
中文描述： 8兆（1兆× 8，引導塊）3V電源快閃記憶體
文件頁數(shù)： 1/43頁
文件大?。?/td> 282K
代理商： M29W008ET90N6E
Rev 0.1
1/43
June 2005
1
M29W008ET
M29W008EB
8 Mbit (1Mb x 8, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■
ACCESS TIMES: 70ns, 90ns
■
PROGRAMMING TIME: 10μs per Byte typical
■
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Embedded Byte Program Algorithm
– Status Register bits and Ready/Busy
Output
■
19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom location)
– 2 Parameter and 16 Main Blocks
■
BLOCK, MULTI-BLOCK and CHIP ERASE
■
MULTIPLE BLOCK PROTECTION/
TEMPORARY UNPROTECTION MODE
■
ERASE SUSPEND and RESUME MODES
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby modes
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– M29W008ET Device Code: D2h
– M29W008EB Device Code: DCh
■
ECOPACK
TSOP40 PACKAGE
Figure 1.
Package
TSOP40 (N)
10 x 20mm
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