參數(shù)資料
型號(hào)： M29DW128F70NF6F
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁(yè)，引導(dǎo)塊）3V電源，快閃記憶體
文件頁(yè)數(shù)： 1/93頁(yè)
文件大?。?/td> 719K
代理商： M29DW128F70NF6F
PRELIMINARY DATA
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev 1.0
1/93
August 2005
1
M29DW128F
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)
3V Supply, Flash Memory
Features summary
■
Supply Voltage
– V
CC
=
2.7V to 3.6V for Program, Erase and
Read
– V
CCQ
= 1.65V to 3.6V for Input/Output
– V
PP
=12V for Fast Program (optional)
■
ASYNCHRONOUS RANDOM/PAGE READ
– Page Width: 8 Words
– Page Access: 25, 30ns
– Random Access: 60, 70ns
■
PROGRAMMING TIME
– 10μs per Byte/Word typical
– 4 Words / 8 Bytes Program
– 32-Word Write Buffer
■
ERASE VERIFY
■
MEMORY BLOCKS
– Quadruple Bank Memory Array:
16Mbit+48Mbit+48Mbit+16Mbit
– Parameter Blocks (at Top and Bottom)
■
DUAL OPERATIONS
– While Program or Erase in one bank, Read
in any of the other banks
■
PROGRAM/ ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM
– Faster Production/Batch Programming
■
COMMON FLASH INTERFACE
– 64 bit Security Code
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
HARDWARE BLOCK PROTECTION
– V
PP
/WP Pin for fast program and write
protect of the four outermost parameter
blocks
■
SECURITY FEATURES
– Standard Protection
– Password Protection
■
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2220h + 2200h
■
ECOPACK
PACKAGES AVAILABLE
BGA
TSOP56 (NF)
14 x 20mm
TBGA64 (ZA)
10 x 13mm
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