參數(shù)資料
型號: M27W102-100F6TR
廠商: 意法半導(dǎo)體
英文描述: 1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM
中文描述: 1兆位64Kb的x16低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器
文件頁數(shù): 1/15頁
文件大?。?/td> 104K
代理商: M27W102-100F6TR
1/15
April 2000
M27W102
1 Mbit (64Kb x16) Low Voltage UV EPROM and OTP EPROM
I
2.7V to 3.6V LOW VOLTAGE in READ
OPERATION
I
READ ACCESS TIME:
– 70ns at V
CC
= 3.0V to 3.6V
– 80ns at V
CC
= 2.7V to 3.6V
I
PIN COMPATIBLE with M27C1024
I
LOW POWER CONSUMPTION:
– 15
μ
A max Standby Current
– 15mA max Active Current at 5MHz
I
PROGRAMMING TIME 100
μ
s/word
I
HIGH RELIABILITY CMOS TECHNOLOGY
– 2,000V ESD Protection
– 200mA Latchup Protection Immunity
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 008Ch
DESCRIPTION
The M27W102 is a low voltage 1 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storage and is organized as 65,536
words by 16 bits.
The M27W102 operates in the read mode with a
supply voltageas low as 2.7V at –40 to 85
°
C tem-
perature range. The decrease in operating power
allows either a reduction of the size of the battery
or an increase in the time between battery re-
charges.
The FDIP40W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For application where the content is programmed
only one time and erasure is not required, the
M27w102 is offered in PDIP40, PLCC44 and
TSOP40 (10 x 14 mm) packages.
Figure 1. Logic Diagram
AI01922
16
A0-A15
P
Q0-Q15
VPP
VCC
M27W102
G
E
VSS
16
1
FDIP40W (F)
40
1
40
PDIP40 (B)
PLCC44 (K)
TSOP40 (N)
10 x 14 mm
相關(guān)PDF資料
PDF描述
M27W102-100K6TR PARTITION ISO FOR TERMINAL BLOCK
M27W102-120N6TR Hex Drivers 14-SOIC 0 to 70
M27W102-150B6TR Hex Drivers 14-PDIP 0 to 70
M27W102-150F6TR Hex Drivers 14-PDIP 0 to 70
M27W102-150K6TR Hex Drivers 14-SO 0 to 70
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