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參數(shù)資料
| 型號(hào)： | M27W102-100B6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 1兆位64Kb的x16低壓紫外線可擦寫可編程只讀存儲(chǔ)器和OTP存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 7/15頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | M27W102-100B6TR |
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M27W102
Table 9. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
IH
±
10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400
μ
A
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Test Condition
Min
Max
Unit
t
AVPL
t
AS
Address Valid to Program Low
2
μ
s
t
QVPL
t
DS
Input Valid to Program Low
2
μ
s
t
VPHPL
t
VPS
V
PP
High to Program Low
2
μ
s
t
VCHPL
t
VCS
V
CC
High to Program Low
2
μ
s
t
ELPL
t
CES
Chip Enable Low to Program Low
2
μ
s
t
PLPH
t
PW
Program Pulse Width
95
105
μ
s
t
PHQX
t
DH
Program High to Input Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to Output Valid
100
ns
t
GHQZ(2)
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address
Transition
0
ns
Programming
The M27W102 hasbeen designedto be fully com-
patible withthe M27C1024 and hasthe same elec-
tronic signature. As a result the M27W102 can be
programmed as the M27C1024 on the same pro-
gramming equipmentapplying 12.75V on V
PP
and
6.25V on V
CC
by the use of the same PRESTO II
algorithm. Whendelivered (andafter each ‘1’s era-
sure for UV EPROM), all bits of the M27W102 are
in the ’1’ state. Data is introduced by selectively
programming ’0’s into the desired bit locations. Al-
though only ’0’s will be programmed, both ’1’s and
’0’s can be presentin the data word. The only way
to change a ‘0’ to a ‘1’ is by die exopsure to ultra-
violet light (UV EPROM). The M27W102 is in the
programming mode when V
PP
input is at 12.75V,
E is at V
IL
and P is pulsed to V
IL
. The data to be
programmed is applied to 16 bits in parallel to the
data output pins. The levels required for the ad-
dress and data inputs are TTL. V
CC
is specified to
be 6.25V
±
0.25V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27W102-100F6TR | 1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W102-100K6TR | PARTITION ISO FOR TERMINAL BLOCK |
| M27W102-120N6TR | Hex Drivers 14-SOIC 0 to 70 |
| M27W102-150B6TR | Hex Drivers 14-PDIP 0 to 70 |
| M27W102-150F6TR | Hex Drivers 14-PDIP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
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| M27W201-120N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM |
| M27W201-120NZ6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM |
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