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參數資料
| 型號： | M27C1001-45F6TR |
| 廠商： | 意法半導體 |
| 英文描述： | Ceramic Chip Capacitors / Standard C0G; Capacitance [nom]: 36pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: Unmarked |
| 中文描述： | 1兆位存儲器的128KB x8紫外線和OTP存儲器 |
| 文件頁數： | 9/17頁 |
| 文件大?。?/td> | 159K |
| 代理商： | M27C1001-45F6TR |
9/17
M27C1001
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C am-
bient temperature range that is required when pro-
gramming the M27C1001. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27C1001, with V
PP
= V
CC
= 5V. Two identifier
bytes may then be sequenced from the device out-
puts by toggling address line A0 from V
IL
to V
IH
. All
other address lines must be held at V
IL
during
Electronic Signature mode.
Byte 0 (A0 = V
IL
) represents the manufacturer
code and byte 1 (A0 = V
IH
) the device identifier
code. For the STMicroelectronics M27C1001,
these two identifier bytes are given in Table 4 and
can be read-out on outputs Q7 to Q0.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C1001 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27C1001 in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27C1001 is to be exposed to
these types of lighting conditions for extended pe-
riods of time, it is suggested that opaque labels be
put over the M27C1001 window to prevent unin-
tentional erasure. The recommended erasure pro-
cedure for the M27C1001 is exposure to short
wave ultraviolet light which has a wavelength of
2537 . The integrated dose (i.e. UV intensity x
exposure time) for erasure should be a minimum
of 15 W-sec/cm
2
. The erasure time with this dos-
age is approximately 15 to 20 minutes using an ul-
traviolet lamp with 12000 μW/cm
2
power rating.
The M27C1001 should be placed within 2.5 cm (1
inch) of the lamp tubes during the erasure. Some
lamps have a filter on their tubes which should be
removed before erasure.
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| M27C1001-60B6X | 1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| M27C1001-60C1TR | 1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M27C1001-45F6X | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| M27C1001-45FTR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM |
| M27C1001-45L1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| M27C1001-45L1X | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
| M27C1001-45L3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
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